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| LED - Chip 25.02.2008 Radiation Infrared Type Point Source Technology AlGaAs/AlGaAs ELC-740-29-40 rev. 03 Electrodes N (cathode) up typ. dimensions (m) O100 +7 -3 typ. thickness 150 (25) m 360 - 10 + 20 R 30 310 cathode gold alloy, 1.5 m anode gold alloy, 0.5 m 245 450 + 20 -10 180 PS-14 Maximum Ratings Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward current (DC) Peak forward current tP 50 s, tP/T = 1/2 180 R 15 5 Symbol IF IFM Min Typ Max 75 150 Unit mA mA Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Forward voltage2 Reverse voltage Radiant power1 Radiant power1,2 Peak wavelength Spectral bandwidth at 50% Switching time 1) 2) Symbol VF VF VR e e P 0.5 tr , tf Min Typ 1.75 1.9 Max 2.2 Unit V V V IF = 20 mA IF = 50 mA IR = 100 A IF = 20 mA IF = 50 mA IF = 20 mA IF = 20 mA IF = 20 mA 5 0.8 1.2 2.8 730 740 30 40 750 mW mW nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment for information only Labeling Type ELC-740-29-40 We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Lot N e(typ) [mW] VF(typ) [V] Quantity |
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